Analysis and Optimization of Accumulation-Mode Varactor for RF ICs
نویسندگان
چکیده
| This paper presents a novel RF IC varactor implemented in standard CMOS process. This device has shown a remarkable tuning range of 150%, sensitivity of 300%/V, and quality factor of 23 at 1 GHz. A physical model of the varactor is presented and con rmed with measured data. Using the model derived, optimization has shown that a Q as high as 200 can be achieved.
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تاریخ انتشار 1998